Abstract The photoconductive switch investigated has a dimension of 50μm×50μm and an interdigital finger with 4μm metal and 4μm InP semiconductor. It is characterized by a dark resistance>>10 MΩ and a switch capacitance of 30 fF Under 200-ps optical pulses of 18 mW peak power and 100 MHz repetition frequency, the switch has an average on-resistance of 3 KΩ over 2 ns and off- resistance of 100 KΩ over 8 ns due to laser spontaneous emission. Sample-and-hold of 1 volt amplitude and 10 MHz sinusoidal signal at l00 Msamples/sec is performed by activating the switch with 200-ps optical pulses and by holding the sampled signal over the 2 pF gate capacitance of the FET source follower. The maximum sampled amplitude of 78 mV is due to 3.1 KΩ on-resistance over 2 ns aperture time and the observed feedthrough of 19mV is due to 100 KΩ off-resistance over 8 ns holding time interval.
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